英文写作总结

energy separation（energy difference）between the quantum dot (QD) ground and first-excited states 能量间隔
Analysis byTransmission Electron Microscopy (TEM) has identified 分析
Whilst同时
Stacking Fault s (SF) and threading dislocations (TD) are often associated withthe large lattice mismatch in most III – V semiconductor films.与…有关
the GaAs barrier layerwas divided in two parts分割
a characteristicv-shape gliding有…特征
Thepresence of these SFs is observed to create surface QDs被认为是
Areas区域
extending to延伸至
In contrast to与…对比
we wouldsuggest this could be related to我们认为
dislocationsoccurring at the microscopic level 出现在
migrate away from迁移开
spectral response光谱响应
in terms of根据，与…有关
composition，content组分
attractingstrong interest引起兴趣
aspects such as许多方面例如
As previously reported正如以前报道的
Theemission wavelength of the QDs red-shifted by 300 nm红移了300nm
As the compositionis increased, there is an increase in density and size随着…增加什么增加
the reduction ofPL intensity for larger compositions occurs as a result of threading dislocations being formed
suppressed by压制，抑制
epilayer外延层
variation变化
interrupted growth method间断生长
ion (Ar+) laser with 514.53 nm氩离子激光波长
it can be seen that从…可以看出
reveal a strongquantum localization effect展示
Such ablue shift in EL wavelength could be attributed to the band-filling effect of localized energy states蓝移，归咎于，能带填充效应
Ablueshift of 3 and 1.7 cm⁻¹ 蓝移
Incorporating结合
3–1.6mm has beenachieved for InAs/GaAs QDs by实现
are limited by性能局限于
received littleattention to date现在已经没人关注
spacer layer隔离层
the initial 15 nm of theGaAs SPL was deposited at 5101C, following which the temperature was increased to 580 1 C for the remainder of the GaAs SPL随后
thermal escape热逃逸
QD ensembles量子点群
the value ofE E值
are dramaticallyreduced巨大的
takes place发生，出现
QD PL bandcaused by PL图，引起
are taken into account考虑
activeregion活性区
verticalstrain coupling 垂直耦合
sample c shows thehighest value (75 meV) followed by sample b with 60 meV and sample d with 56 meV排序
is crucial for对…至关重要
zero-dimensional structures零维结构
involving涉及
cap layer盖层
With an increase in the excitation power (20 mW to100 mW) there is an increase in the contribution related to the excited state of sample
one in whichthere are two ‘‘families’’ of QDs with different average sizes，一个…
the thermal escape will produce ared-shift of P2 emission band产生红移
anorder of magnitude lower少一个数量级
Such phenomena support the hypothesis that我们认为
made upof a sum of contributions of什么的相互作用
With increasing temperature, there may be atransfer of carriers from larger to smaller QDs随着…增加
A set of samples一系列
epitaxy on(1 0 0) oriented外延在…100面
As one can seethat 可以看出
PL spectrawere fitted with a Gaussian profile拟合
Thesmaller Stokes-type shift combining with the narrow PL linewidth suggests that两原因结合说明了什么
is located at能级位于
one can find that可以看出
charge carriers载流子
discrete energy level离散能级
is strongly dependent on取决于
ten-layer stack10叠层
a new class of一新类别
enabletailoring of the detection wavelength能够对探测波长进行裁剪
bias dependenceof the responsivity响应率随偏压变化
escape routes逃逸路线
dual-color双色
final states in the surroundingmatrix终态
a bias tunableenergy separation 偏压可调的能级间隔
energyintervals能级间隔
is assignedto指定为
In–Ga intermixing互混
lateral size横向尺寸
The volume of each QD is defined as hA/2with A the area and h the height 定义什么为什么
capping layer盖层
be of great potentialfor有很大潜力
three dimensional carrier confinement of the QD三维限制效应 3D confinement
interaction between相互作用
suffer from承受 sustain
spreads out to传播到
The insert shows插图说明
the increase of the quantumefficiency overcomes the increased dark current超过
pushedthe response peak toward 推向
wavefunction coupling波长耦合
When positively biased当正偏压时
artificial atom-like人工类原子
hybrid混合
wavelengthtuning波长调制
significant impact on有重要影响
(i.e. QDs)例如
Top left panelshows左上图说明了
photo-excited carriers光生载流子
be compensatedin part by部分
mesas台面
blackbody source黑体源
be coupled to被耦合到
reflection grating反射光栅
photolithographic techniques光印刷技术
Indium-bump铟柱
bias range from…to范围
multi-spectral response多光谱响应
spectral tuning光谱调制
adjacent to临近
the tailoringof detection wavelength 探测波长裁剪
have an additionaladvantage of优势
elevates抬高
thesplitting of the single detection peak 探测峰的劈裂
In principle原则上
blocking layer阻挡层
Additionally=in addition
Relaxselection rule选择定则
phonon bottleneckeffect声子瓶颈效应
Systematic study of系统研究了
Fullwidth half maximum of the spectral response 半高宽
are of interestfor several applications 有兴趣
outperformthe ones in the market胜过
completed a detailed investigationof研究了
bias-tunability电压调制性
Some solutions tomitigate these problems 解决问题
limited the manufacturing yield of large area focal-plane arrays量产
carrier relaxation-times载流子弛豫时间
the intricate dependenceof the operating wavelength on the size and shape of the dot后者依赖于前者
random self-assembly process随机自组装过程
Apart from除什么之外
is estimated to估计为
average spacing平均距离
lateral coupling横向耦合
a factor of 10十分之一
Low temperature photocurrent peaksobserved at 120 and 148 meV were identified as 指认为
intersubband transitions emanating from来自于
night vision夜视
The 3D confinement will give rise to产生
the number of allowed dark current transitions跃迁数
give rise to a photocurrent产生光电流
a detailed understanding of all relevant transitionsoccurring in the detector is not yet gained 还没有很好的解决
optical pumping光学泵浦
is shownto be 认为是
provide theflexibility to adjust the electronic states 调节的灵活性
60 Åin height and 220 Å in radius
Repulsive相反的
strain-compensated应变补偿
impurities incorporated during the growth杂质掺杂
sensitive layers活性层，敏感层
inthe 25 – 400°C interval在…区间间隔
Silver contacts proved to be ohmicthrough current – voltage measurements欧姆接触
rectifying behavior整流特性
no systematic investigation was carriedout on responsivity versus temperature 执行系统的研究
in dark conditions在暗条件下
cuton and cut off wavelengths 截止波长
exhibited photoresponse peaking at 3.5 um波长在多少
The operation principle of工作原理
nominal Ge deposition thickness名义厚度
Oneobvious feature is that 可以看出
is consistent with与…一致
with amain peak at around 3.5 um主峰
the hole absorption of photons光子的空穴吸收
are utilizedto用于
night vision, and optical communication(有点)等等
are particularly worthy of academic investigation值得，学术研究
polarization selection rule偏振选择定则
this Si-based detector hasthe advantage of the monolithic integration with the read-out circuit与硅读出电路集成
cut downthe dark current降低暗电流
added delta dope德尔塔掺杂
the vertical alignment垂直耦合
We report the摘要
intensity ratio of强度比
was accompanied by伴随着
duringthe last decade 近十年来
delta-function-like densitydelta函数
two-dimensionalarray 二维阵列
misfit dislocation nucleation位错成核
were ascribed to归咎于
This shift couldbe associated with phonon confinement 与…联系起来
phonon replicas声子峰
structure with h = 40 nmwith的用法
the broad shape ofthe PL peak suggests a large inhomogeneity of the islands’ size distribution 物表明
It is worth mentioning that值得一提的是
induce the QD energyredshift 红移
attributed to a type-IIband alignment II型能带
cannot be不能，not是连着的
This blueshift can be explained in termsof a type-II band lineup 蓝移，以…有关
the holes are trapped inthe Ge islands 位于
increasedconfinement增强的限制
holes in the wetting layer could betransferred to the islands转移
One can note that可以看出
good optical quality好的光学性质
interdiffusionprocesses 互扩散
spatiallyordered arrays 空间有序阵列
in-plane ordering of the islands平面有序
monolayer单原子层
the island base量子点基底
Theislands are oriented along directions close to [010] and朝向
the net volume of净体积
exceed超过
vibration band震动峰
transition point变化点
The dependences ofh_c on the thickness d_SiGe is investigated临界厚度依赖于SiGe厚度
Ge segregation偏析
provides the best agreement betweenthe calculated and experimental data 相符合
a part of一部分
relying onobtained results, it can be assumed that 从得到的结果…可以看出
spatial ordering空间有序
interdiffusion processes扩散过程
increasein Ge content leads to Ge含量的增加
noticeably显著的
mass transferfrom质量迁移
the quantity of materialdiffused into the islands is equivalent to4 nm 等于
is associated with归咎于
island self-ordering自有序
Another possible reason for另一个可能的问题
we attributeto 我们认为
dominant absorption bandspeaked主要吸收峰
We tentativelypropose that我们暂时提出
the electronsare free in the Si conduction band 电子是自由的
P-polarizedabsorptions 偏振吸收
quantum efficiency of about 0.015%of的用法
wavelength range of范围
relax the momentum conservation requirement缓解动量守恒
still far from ideal远不如
currentof 7 mA速流7mA
intapping (contect) mode 轻巧或接触模式
3 nm tall3nm高
By contrast作为对比
are consistent with与…有关
first-order opticalmode一介光学模式
vibrational peaks振动峰
the downward shift of theGe–Ge peak to 299 cm⁻¹红移
Within the frame of 在…框架下
irrespective of不考虑
contact angle接触角
The interest ismainly driven by 兴趣
type-II band alignmentII型能带排列
degrade the qualities降低质量
loading into the vacuum chamber装入腔体
be decomposed into two Gaussianshape peaks 分解为
shows strong blueshifts蓝移
is believed to be相信是
Coulomb charging effect库伦电荷效应
are accompanied by伴随着
give detailed insights into详细的了解
relies on依赖于
a changein shape in的写法
are indicative for指认为
It isnoticeable that值得注意的是
The ratio of domes tohuts 比例的用法
Isby a factor of two smaller than几分之几
is in consistence with有关
Itis established that得出
A feature of particular interest is特别感兴趣的是
AFM were used to characterize用来表征
is in fact detrimental to对…有害，不利
at theexpense of以…为代价
penetrates through贯穿
defect-free无缺陷的
Owing to由于
more uniform in sizein+名词，在…方面
optical phonon frequencies光学声子频率
it is an indicator on关于什么的指示
perform=carry out 执行
phonon assistedrecombination声子辅助复合
increasingtendency for 趋势
heteroepitaxialGe/Si systems系统
optic-phonon modes光学振动模
were investigated bya combination of Raman scatter spectra and photoluminescence. 结合
is considered as；is correlating with认为是
The intensities of the Ge–Ge peak I_Ge_–_Geand the Ge–Si peak I_Ge_–_Si are found to be reliable to determine 可靠的
shows a good fit toour experimental results相符
with respect to相对于…
tentatively attributed to暂时的
intensive studies大量研究
wemainly deal with this issue by investigating处理
A redshift of PLspectra is observed after annealing at temperature below 780 °C, whereas annealing above this temperature induces a blueshift. 然而
PL signal recorded forGe/Si cluster single layer指认为
we attempt to interpret these resultswithin a simple thermodynamic model 尝试解释,在..框架下
The composition distribution of Ge islandsis also of importance重要
most methodsused in addressing the composition of Ge islands探究
provides the trigger to使…开始启动
ring-like structure环状结构
The first term第一个式子
Note that here值得注意的是
transport characteristics of特性
Estimates show that测试表明
there has beena surge of interest in 大量的
in-plane confinement横向限制
as a result of breaking of the polarization selectionrules偏振选择定则
zero-dimensionalcharacter of the electronic spectrum零维
render展现
There are only few works announcingthe long-wave operation 报道
was sandwiched inbetween sth and sth夹在
high sheet density高密度
the top portionof顶部
were in good agreement with一致
posea long-standing puzzle 提出问题
Arich body of subsequent work大量的
twokey aspects came to light 重要方面
in view of考虑到
Theamount of the strain大量的，修饰不可数
with reference to关于
The height and the base of the dots range from 8 to 15nm and from 140 to 200 nm, respectively, upon increasing the thickness of Si spacer from 14 to 100 nm/ upon increasing the thickness up to一旦…
a strain field superpositionof buried dots应变场的交叠
were explainedin terms of two possible contributions 关于
a strained Si₆₅Ge_0.35quantum well, which, in turn, is incorporated ina Si matrix包含在
the polarizationdependence of the induced PC后面依赖于前面
elucidate the nature of photoresponse阐明….的本质
normal incidence infrared radiation正入射红外辐射
GeQDs enclosed in a silicon matrix 包含在
We suspect that我们认为
As stated before如前面所述
Lorentzian decomposition of the spectra分峰
This edge is tilted带边倾斜
The value of the barrier height U0derived from P2 depends on the effective mass 依赖于
energy difference between
a new classof 一类
It appears thatGe/Si quantum dots could combine the advantages of quantum dots as compared to quantum wells while keeping the compatibility with Si-based signal processing. 看起来，结合
opens theroute to the realization of 实现
the photoluminescencespectrum is dominated by the radiative recombination associated with the Ge dots. 占据
The measurement is performed测试
transverse-optical phonon-assisted recombination横向光学声子辅助复合
along with伴随着
is similar forA and B相似的
the 160 meV resonance is quenched消失
the temperature dependence onthe electric power依赖于
be decomposed intotwo components分成
The samples are here after referred to asGe300, Ge600, and Ge1500, respectively.在之后的文章表示为
Then, a 10 nm thick Si1xGexlayer with x ranging from 0% to 20% was grown,followed by a Ge layer
Since 因为
The additional fluxof atoms流
In order to test thisassumption为了证明这种假设
Ge is depositedon a Si0.8Ge0.2 alloy沉积用被动
could be invoked to explain用来解释
elastic strain energystored in the predeposited Si1-xGex layer应变存储
2 displays显示
Sth reveal that揭示了
Itis very important to know非常重要
Another attractive object另一个有趣的是
However，is not clarified yet还没解决
were chosen in such a way as to avoid在这种条件下 in sucha way that
, and then,随后
reaches a stationary value缓和
provides the best agreement between一致
it also increases Si content in islands and, as aresults, increase the critical volume 结果
We are making emphasis on强调
as it was noticedabove如上所述
Increase in deposited Genominal thickness from 9 to 11 ML leads to增加什么，导致
the average island height makes2 nmmake可以当is用
the ratio ofisland heights versus their lateral sizes 比
Special attention in this work is paid to注重
in connection with与..有关
We consider the doublet band behavior in sample B asrelated with 我们认为、有关
We performedsth我们执行什么
Both these facts give reasons toconsider this band as related with 可以解释，有关
Islandsgrow；The islands were formed by 量子点生长
The island coarsening量子点的粗化
The intermixing between Si and Ge dominatedat higher temperatures 占据主导地位
pyramids and domes appeared to coexistin a stable configuration
However,the growth and evolution of islands prepared by IBSD has not been studied adequately还没人研究
密度大用greater
clustering to form集聚形成
approximately 60%of the islands were less than the aspect ratio of 1主语颠倒
This is an implicationthat表明
The short islands could grow up if the amount of Geincreased长大
Subsequently随后
occursvia a combination of发生，结合
，wherebysth do sth 通过上述这种方法
statistical analysis of island size统计
displays=show=operates=take over 显示了
In succeeding sections=In what follows，在下文中
Wequantify this observation, identify the coarsening mechanisms 认为
Sth contributes significantly to
Arebeing fed by this reservoir of Ge atoms 水库，浸润层，提供
Isevident in the appearance of证据
is indicative ofOstwald ripening指示是熟化
islands may communicate more effectively via surface diffusion at higher growth temperatures量子点扩散，交流
a variety of recipes for不同的方法
coalescence合并
remarkable observations显著的观察
Intermixing ofsth with sth
larger particles grow at the expense ofsmaller particles代价
，yieldingsth 产生
obeysthe same relationship遵循
delay the onset of开始
virtually=mostly大部分
transform to/form
a larger fraction of大部分
substantialnumbers of大量的
often coincide with有关，由于
Further insightcan be gained by considering进一步考虑
appear to似乎
is likely to有可能
to our knowledge众所周知
present apossible scenario for方法
undergoa morphological transition to承受
understood on grounds of依据什么
the growth topology of生长量子点图
reached a level, where达到最大值
It is noteworthy at thispoint that值得注意的是
The island sizeis dominated by the balance of 由于
, suggesting that
gain insight into
island populations量子点群
dependence of total cluster volumeas a function of Ge indicates that依赖于
Samples spanning the Ge coverage range from0<Ge<14.0 ML were grown在什么范围
careful catalogingof the shape evolution of these islands as a function of growth conditions has not yet been performed 内容还没有解决
were used to document
coherent=dislocation-free
present a detailed catalog of
cross-sectionalline scans横截面
we are able tomap island evolution for different growth temperatures阐明，阐述
At the left-hand side of this cluster左手边
It is wellknown that众所周知
presentinga detailed analysis and discussion of阐述了
in the timeinterval of 30–45 min between the formation of two successive dislocations 间隔
Si atom has been transported intothe island迁移
（see later）请看下文
thorough investigation of全面的研究
The authors applyselective wet chemical etching 采用
evolves towardan intriguing semifacetted structure演变成
an understanding of the capping process is of fundamental importance重要的
The effect is temperature dependent温度依赖的
the height scales高度尺寸
presumably because大致归咎于
misfit strain位错应变
，whichin turn affects转过来影响
coincides with伴随着
corresponding=related
were characterized by atomic force microscopy表征
The left column of Fig. 1左边一排
Demonstrating/indicatingthat
is mainly responsible for归咎于
building blocks for future electronic or optoelectronic devices奠定基石
remains still a matter of controversy/was not yet clearly identified/was not investigated in detail.还没解决
straininduced triggering诱导的没有一杠
temperature was ramped down/up温度降低、身高
Standing from the viewpoint of the simulation
Fig后面接的词A detailed investigation shows that；We find out that；It should be noted that；We can see that；In contrast with Ge islandsgrown on Si, we observe；It is revealed that；It was found out that
a record speed of 12 GHz记录速率
possess high mobility拥有
In comparison to比较
zoom-in view of缩放图
KEEN attention has been drawn to the study注意
These extraordinary features非凡的
transfer yield is>99%专业率
Overall=From the aforementioned analysis总的来说
the flexible Ge diodeindicates a much lower turn-on voltage than Si diode, validating 证明了
Very recently，最近
with combined high and low temperaturehigh and low processes 结合
As of today截至今天
a handful of reports show少量的
The TFTdenoted as TFT-2 indicated as(也是定义的意思) negative values定义
is elaborated below叙述
is of great interest感兴趣
the implanted side of Ge wasin contact with glass substrate 连接在一起
strengthenthe chemical bonds 强化
may be an alternativeto 选择
visible light可见光
process flow工艺流程
generatingsth生产
The prospect isto integrate期望
irregular shape不寻常的
single-crystal Geis yet to demonstrate 因此
performance tradeoff性能折衷
Theoretical calculations have also been conducted执行
The capacitanceis dependent on the series diode width and metal stack thickness依赖于
To make a fair comparison比较
Canhave better RF properties拥有
not presented here due tothe length limit of this Letter
make them superb candidates for 候选
A considerable number of大量的
critical dimensions极限尺寸
Of more importance重要的是
bulk wafer counterparts对等物
lightly doped亲掺杂
Vicat softeningpoint of PET substrates is 170°C
stripping off剥离
firmly contacted with牢固地
theoretical analysis has been conducted执行
In essence本质上
Tiny/substantialchanges小大变化
innate limitation固有的本质的
Figure 1schematically illustrates
de-convoluted using the Gaussian/Lorentzian function去复杂化
photodetector under shiningof 633 nm light照射
Figure 4plots画出了
magnified image放大图
As expected如预期的
is speculated to be推导出

时态用法

摘要：一般现在时

引言：一般现在时，别人说用过去式，

别人发现什么it was found that sth done sth
it indicates that说的内容用一般现在时
对于现在我们做的it is found that sth do sth
study, investigation等要用过去式的被动was studied, was carried out，was observed,也可以用现在完成时，现在完成时和过去完成时区别只是起点不一样，一个是以现在为起点，一个以过去为起点。
陈述一种事实用一般现在时（可有引用文献）
涉及到figure这种词一般用现在时

实验：过去式

结果与讨论：一般用现在时，如果有人为因素，如我们做了什么事情，要用过去式，因为是过去做的。涉及实验部分也要用过去式。

结论：the experimental investigations revealed/It was shown that/It was revealed experimentally that后面加一般现在时陈述你之前得出的结果

注意点：当用到用什么设备测试时用过去时，当关于我们以前做了什么,执行什么动作时用过去式，但是如we believe，we find，we can see that，we observe观测到什么结果，这些词可不用过去式。可用could/would be done sth，讲到其他文献时用过去式

不可数名词一般不加the，要特指才加the，具体化，但是如the realizationof是固定用法，realization是不可数，
复数可以不加the，
中文里的这个，那个，某特定的，能指出来的就加，你都不清楚指不出的不加。
表示抽象意义、概念的不可数名词和复数不加the
组合词看特指没特指,没特指不加the,如deposited on Si substrate，deposited on the Si substrate

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